Low voltage active semiconductor device monolithically integrated with voltage divider device

An integrated circuit device comprises at least one low voltage active semiconductor device formed a semiconductor substrate, and a depletion field effect potential divider (DFE-PD) formed above a major surface of the semiconductor substrate and separated therefrom by a dielectric layer. The DFE-PD...

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Bibliographic Details
Main Author COYNE, EDWARD JOHN
Format Patent
LanguageChinese
English
Published 01.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit device comprises at least one low voltage active semiconductor device formed a semiconductor substrate, and a depletion field effect potential divider (DFE-PD) formed above a major surface of the semiconductor substrate and separated therefrom by a dielectric layer. The DFE-PD is configured to scale a high voltage input signal received from a high voltage node to a low voltage output signal, and to provide a low voltage signal to the low voltage active device as an input signal thereto.
Bibliography:Application Number: TW202312107077