Semiconductor device
A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, at least one support layer in contact with the plurality of lower electrodes and extending in a direction, parallel to an upper surface of the substrate, an upper electrode disposed on the plurali...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a substrate, a plurality of lower electrodes disposed on the substrate, at least one support layer in contact with the plurality of lower electrodes and extending in a direction, parallel to an upper surface of the substrate, an upper electrode disposed on the plurality of lower electrodes and the at least one support layer, a dielectric layer between the plurality of lower electrodes and the upper electrode and between the at least one support layer and the upper electrode, and a blocking layer disposed between the at least one support layer and the dielectric layer, and including a material having a bandgap energy greater than a bandgap energy of a material of the at least one support layer. The dielectric layer is in contact with the plurality of lower electrodes and is spaced apart from the at least one support layer by the blocking layer. |
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Bibliography: | Application Number: TW202312109786 |