Light-emitting device and manufacturing method thereof
A pixel structure includes a base material having an upper surface, a lower surface and a side surface between the upper surface and the lower surface; an circuit structure buried in the base material, wherein the circuit structure includes an upper circuit layer exposed on the upper surface, a lowe...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A pixel structure includes a base material having an upper surface, a lower surface and a side surface between the upper surface and the lower surface; an circuit structure buried in the base material, wherein the circuit structure includes an upper circuit layer exposed on the upper surface, a lower circuit layer exposed on the lower surface and a middle circuit layer between the upper circuit layer and the lower circuit layer and cladded by the base material; a plurality of light emitting semiconductor units on the upper surface and electrically connected to the circuit structure; a non-light emitting semiconductor unit buried in the base material, directly connected to the middle circuit layer and exposed an outside surface thereof; and a light-transmitting layer covering the plurality of light emitting semiconductor units and directly contacting the base material. |
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Bibliography: | Application Number: TW202211119121 |