Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode...

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Main Authors MATHURIYA, AMRITA, MANFRINI, MAURICIO, MANIPATRUNI, SASIKANTH, SATO, NORIYUKI, REN, ZEYING, RAMESH, RAMAMOORTHY, MUKHERJEE, NILOY, GOSAVI, TANAY, DOKANIA, RAJEEV KUMAR, WU, JASON Y, ATIQUZZAMAN, FNU, RATHI, SOMILKUMAR J, PANDEY, PRATYUSH, VELARDE, GABRIEL ANTONIO PAULIUS
Format Patent
LanguageChinese
English
Published 01.12.2023
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Summary:A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
Bibliography:Application Number: TW202312100394