Semiconductor package and manufacturing method thereof
A semiconductor package and a manufacturing method thereof is provided. The semiconductor package includes a first semiconductor die, including a substrate and transistors formed at a front side of the substrate; a power distribution network, spreading at a back side of the substrate and penetrating...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor package and a manufacturing method thereof is provided. The semiconductor package includes a first semiconductor die, including a substrate and transistors formed at a front side of the substrate; a power distribution network, spreading at a back side of the substrate and penetrating through the substrate, to provide power and ground signals to the transistors; a dielectric material, laterally surrounding the first semiconductor die; and a second semiconductor die, having a central portion bonded with the first semiconductor die and a peripheral portion in contact with the dielectric material. |
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Bibliography: | Application Number: TW202312101545 |