Tool and processes for electrochemical etching

A method for fabricating high aspect ratio nanostructures in arbitrary functional materials. An (N+1)th layer of substrate material is deposited on top of existing N layers of nanostructures, where N is a natural number. The substrate material in the (N+1)th layer is then patterned and etched to cre...

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Bibliographic Details
Main Authors EKERDT, JOHN G, BARRERA, CRYSTAL, MALLAVARAPU, AKHILA, SREENIVASAN, SIDLGATA V, HRDY, MARK, PANDYA, PARTH, AJAY, PARAS
Format Patent
LanguageChinese
English
Published 01.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating high aspect ratio nanostructures in arbitrary functional materials. An (N+1)th layer of substrate material is deposited on top of existing N layers of nanostructures, where N is a natural number. The substrate material in the (N+1)th layer is then patterned and etched to create complementary nanostructures in the substrate material. Furthermore, a conformal coating of gap-fill materials, encapsulation layers, and functional material on the complementary nanostructures is performed to create functional material nanostructures in the (N+1)th layer. A set of selective etches on the substrate material is then performed leaving behind multi-layered high aspect ratio nanostructures in the functional material.
Bibliography:Application Number: TW202312113180