Coil structure for generating plasma and semiconductor process equipment

• Main Authors: CHEN, GUO-DONG, YANG, YAN-MING, YANG, JI-PENG, WANG, WEI, CHEN, XING, MAO, XING-FEI, YAO, WEI-JIE, WANG, SONG, LI, YAN, DAI, GENG-LIN, ZHAO, JIN-RONG, WEI, GANG
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

A coil structure for generating plasma and a semiconductor process equipment. In the coil structure, each coil unit includes M coil groups, M being an integer greater than or equal to 4. M coil groups have the same structure and are parallel to each other. The planar coils in each layer of the M coil groups are arranged one by one in the same layer, and the M planar coils located in the same layer are spaced and evenly distributed along the circumferential direction of the planar coils. The coil group includes N-layer planar coils that are parallel to each other, with N being an even number greater than or equal to 4. The N-layer planar coil is arranged at intervals perpendicular to the plane where the planar coil is located, and is sequentially connected in series from beginning to end. The orthographic projection of every two adjacent layers of planar coils on the plane where the planar coils are located is mirror symmetry.