Charged particle beam device, and measurement method

The purpose of the present invention is to control a charged portion according to the structure of a transistor formed on a semiconductor material, and thereby, to measure the on/off characteristics of the transistor by irradiation with a charged particle beam and light. A charged particle beam devi...

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Bibliographic Details
Main Authors UCHIHO, MINAMI, YACHI, KAZUFUMI, SHIRASAKI, YASUHIRO
Format Patent
LanguageChinese
English
Published 01.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:The purpose of the present invention is to control a charged portion according to the structure of a transistor formed on a semiconductor material, and thereby, to measure the on/off characteristics of the transistor by irradiation with a charged particle beam and light. A charged particle beam device according to the present invention turns on a transistor formed on a semiconductor material by irradiating the gate of the transistor with a charged particle beam, and initializes charges possessed by the transistor by irradiating the transistor with the light, thereby controlling the conductive state of the transistor.
Bibliography:Application Number: TW202312110066