Semiconductor device and forming method thereof

• Main Authors: CHOU, CHI-YU, PAI, YUEHING, MORE, SHAHAJI B, TAN, LUN-KUANG, CHANG, CHENG-WEI
• Format: Patent
• Language: Chinese; English
• Published: 16.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Nanostructure transistors are formed in a manner that may reduce the likelihood of source/drain region merging in the nanostructure transistors. In a top-down view of a nanostructure transistor described herein, source/drain regions on opposing sides of a nanostructure channel of the nanostructure t...