Protection tape and manufacturing method of semiconductor device

A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180 DEG C is larger than or equal to 30 [mu]m/m DEG C and...

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Bibliographic Details
Main Authors LIN, CHIN-KAI, HUANG, CHI-HUA, CHEN, CHUN-FA, XIE, SHI-ROU, CHEN, XUAN-YOU, LEE, CHEN-JU
Format Patent
LanguageChinese
English
Published 16.11.2023
Subjects
ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL
PAINTS
PERFORMING OPERATIONS
POLISHES
SEMICONDUCTOR DEVICES
TRANSPORTING
USE OF MATERIALS AS ADHESIVES
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Summary:A protection tape includes a first substrate layer, an adhesive layer and a shrinkage layer. The shrinkage layer is located between the first substrate layer and the adhesive layer. The thermal expansion coefficient of the shrinkage layer at 180 DEG C is larger than or equal to 30 [mu]m/m DEG C and less than 100 [mu]m/m DEG C, and the hardness of the shrinkage layer is greater than the Shore 30A at 23 DEG C.
Bibliography:Application Number: TW202211117307