Semiconductor switching device

A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent...

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Bibliographic Details
Main Authors KENNERLY, STACEY J, HITCHCOCK, COLLIN WILLIAM, STEVANOVIC, LJUBISA D
Format Patent
LanguageChinese
English
Published 01.11.2023
Subjects
BASIC ELECTRONIC CIRCUITRY
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
PRINTED CIRCUITS
PULSE TECHNIQUE
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Summary:A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent to the well region and surrounded by the well region. A channel region having the second conductivity type, and defining a set of channel region segments, a periphery of the channel region segment being surrounded by the well region. The well region, source region, and channel region cooperatively define a first axial length extending across the surface.
Bibliography:Application Number: TW202312108467