Semiconductor device and methods of fabrication thereof
Embodiments of the present disclosure relate to methods of fabricating conductive features to prevent metal extrusion. Particularly, the conductive feature includes a control layer to reduce grain size of a metal containing layer, thus obtaining a robust structure to decrease extrusion defects. In s...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiments of the present disclosure relate to methods of fabricating conductive features to prevent metal extrusion. Particularly, the conductive feature includes a control layer to reduce grain size of a metal containing layer, thus obtaining a robust structure to decrease extrusion defects. In some embodiments, the control layer is formed between a barrier layer and the conductive feature. In some embodiments, the control layer is formed by adding a control element, such as oxygen, to an upper portion of the barrier layer. |
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Bibliography: | Application Number: TW202211138962 |