Process for the manufacture of a non-deformable P-SIC wafer

The invention relates to a process for the manufacture of a polycrystalline silicon carbide wafer, comprising the following stages: heat treatment of a polycrystalline silicon carbide slab (1); thinning of the polycrystalline silicon carbide slab, said thinning comprising a correction, by removal of...

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Main Authors ROI, JEREMY, ROUCHIER, SEVERIN, SCHWARZENBACH, WALTER, ODOUL, SIDOINE, ALLIBERT, FREDERIC, BIARD, HUGO, DROUIN, ALEXIS, KONONCHUK, OLEG, QUINTERO-COLMENARES, ANDREA, KABELAAN, LOIC
Format Patent
LanguageChinese
English
Published 16.10.2023
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Abstract The invention relates to a process for the manufacture of a polycrystalline silicon carbide wafer, comprising the following stages: heat treatment of a polycrystalline silicon carbide slab (1); thinning of the polycrystalline silicon carbide slab, said thinning comprising a correction, by removal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.
AbstractList The invention relates to a process for the manufacture of a polycrystalline silicon carbide wafer, comprising the following stages: heat treatment of a polycrystalline silicon carbide slab (1); thinning of the polycrystalline silicon carbide slab, said thinning comprising a correction, by removal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.
Author ALLIBERT, FREDERIC
QUINTERO-COLMENARES, ANDREA
KONONCHUK, OLEG
DROUIN, ALEXIS
KABELAAN, LOIC
ROI, JEREMY
ODOUL, SIDOINE
SCHWARZENBACH, WALTER
BIARD, HUGO
ROUCHIER, SEVERIN
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– fullname: ALLIBERT, FREDERIC
– fullname: BIARD, HUGO
– fullname: DROUIN, ALEXIS
– fullname: KONONCHUK, OLEG
– fullname: QUINTERO-COLMENARES, ANDREA
– fullname: KABELAAN, LOIC
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Snippet The invention relates to a process for the manufacture of a polycrystalline silicon carbide wafer, comprising the following stages: heat treatment of a...
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SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title Process for the manufacture of a non-deformable P-SIC wafer
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