Process for the manufacture of a non-deformable P-SIC wafer

• Main Authors: ROI, JEREMY, ROUCHIER, SEVERIN, SCHWARZENBACH, WALTER, ODOUL, SIDOINE, ALLIBERT, FREDERIC, BIARD, HUGO, DROUIN, ALEXIS, KONONCHUK, OLEG, QUINTERO-COLMENARES, ANDREA, KABELAAN, LOIC
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a process for the manufacture of a polycrystalline silicon carbide wafer, comprising the following stages: heat treatment of a polycrystalline silicon carbide slab (1); thinning of the polycrystalline silicon carbide slab, said thinning comprising a correction, by removal of material from the polycrystalline silicon carbide slab, of a deformation brought about by the heat treatment.