Aluminum scandium nitride film and ferroelectric element

An aluminum scandium nitride film according to the present invention contains aluminum, scandium and nitrogen, while additionally containing gallium. The crystal phase of this aluminum scandium nitride film may include a hexagonal crystal. The crystal phase of this aluminum scandium nitride film may...

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Main Authors SHIRAISHI, TAKAHISA, KUSUSE, YOSHIRO, MIZUTANI, RYOICHI, OTA, REIKA, MESUDA, MASAMI, YASUOKA, SHINNOSUKE, IIHAMA, JUNYA, SUEMOTO, YUYA, UEOKA, YOSHIHIRO, FUNAKUBO, HIROSHI
Format Patent
LanguageChinese
English
Published 16.10.2023
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Summary:An aluminum scandium nitride film according to the present invention contains aluminum, scandium and nitrogen, while additionally containing gallium. The crystal phase of this aluminum scandium nitride film may include a hexagonal crystal. The crystal phase of this aluminum scandium nitride film may have a wurtzite structure.
Bibliography:Application Number: TW202312112220