Aluminum scandium nitride film and ferroelectric element
An aluminum scandium nitride film according to the present invention contains aluminum, scandium and nitrogen, while additionally containing gallium. The crystal phase of this aluminum scandium nitride film may include a hexagonal crystal. The crystal phase of this aluminum scandium nitride film may...
Saved in:
Main Authors | , , , , , , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
16.10.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | An aluminum scandium nitride film according to the present invention contains aluminum, scandium and nitrogen, while additionally containing gallium. The crystal phase of this aluminum scandium nitride film may include a hexagonal crystal. The crystal phase of this aluminum scandium nitride film may have a wurtzite structure. |
---|---|
Bibliography: | Application Number: TW202312112220 |