High electron mobility transistor device and manufacturing method thereof

A high electron mobility transistor device including a channel layer, a first barrier layer, a gate structure, and a spacer is provided. The first barrier layer is disposed on the channel layer. The gate structure is disposed on the first barrier layer. The gate structure includes a first P-type gal...

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Bibliographic Details
Main Authors HWANG, ROBIN CHRISTINE, LU, CHIH-HUNG, CHOU, JIH-WEN, CHEN, HSIN-HONG, YEH, PO-HSIEN, HUANG, YU-JEN
Format Patent
LanguageChinese
English
Published 01.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high electron mobility transistor device including a channel layer, a first barrier layer, a gate structure, and a spacer is provided. The first barrier layer is disposed on the channel layer. The gate structure is disposed on the first barrier layer. The gate structure includes a first P-type gallium nitride layer, a second barrier layer, and a second P-type gallium nitride layer. The first P-type gallium nitride layer is disposed on the first barrier layer. The second barrier layer is disposed on the first P-type gallium nitride layer. The second P-type gallium nitride layer is disposed on the second barrier layer. A width of the second P-type gallium nitride layer is smaller than a width of the first P-type gallium nitride layer. The spacer is disposed on a sidewall of the second P-type gallium nitride layer.
Bibliography:Application Number: TW202211109980