Ferroelectric memory device

A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the ferroelectric...

Full description

Saved in:
Bibliographic Details
Main Authors HASAN, MUSARRAT, PARK, GEON-JU, NAM, GAB-JIN, HA, YONG-HO, KUH, BONG-JIN
Format Patent
LanguageChinese
English
Published 16.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the ferroelectric layer. The high dielectric layer and the ferroelectric layer have phases of different crystal structures.
Bibliography:Application Number: TW202211144637