Integrated circuit and method of forming the same

• Main Authors: ZHUANG, HUI-ZHONG, KAO, JERRY CHANG JUI, CHEN, CHIH-LIANG, CHIEN, YUNGN, WU, CHIAUN
• Format: Patent
• Language: Chinese; English
• Published: 16.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit includes a first and second active region extending in a first direction, and a floating gate, a first dummy gate, a first conductor and a second conductor extending in the second direction. The floating gate is electrically floating. The first dummy gate is separated from the floating gate in the second direction. The dummy gate and the floating gate separate a first cell that corresponds to a first transistor from a second cell that corresponds to a second transistor. The first and second conductors are separated from each other in the first direction, and overlap the second active region. The first and second conductors are electrically coupled to a corresponding source/drain of the second active region, and are configured to supply a same signal/voltage to the corresponding source/drain of the second active region. The floating gate is between the first and second conductors.