Variable resistance non-volatile memory

A variable resistance non-volatile memory includes a semiconductor substrate, a first electrode line extending in a first direction away from the semiconductor substrate, a second electrode line extending in the first direction parallel to the first electrode line, an insulating film between the fir...

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Bibliographic Details
Main Authors CHIBA, TOMOKI, TAKASHIMA, DAISABURO, SHIGA, HIDEHIRO
Format Patent
LanguageChinese
English
Published 16.09.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A variable resistance non-volatile memory includes a semiconductor substrate, a first electrode line extending in a first direction away from the semiconductor substrate, a second electrode line extending in the first direction parallel to the first electrode line, an insulating film between the first and second electrode lines, a variable resistance film formed on the first electrode line, a low electrical resistance layer formed on the variable resistance film and having a lower electrical resistance than the variable resistance film, a semiconductor film in contact with the low electrical resistance layer and the insulating film, and formed on opposite surfaces of the second electrode line, a gate insulator film extending in the first direction and in contact with the semiconductor film, and a voltage application electrode that extends in a second direction that crosses the first direction, and is in contact with the gate insulator film.
Bibliography:Application Number: TW202211118016