Semiconductor device and circuit device

A semiconductor device includes: a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode; and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode. A first source electrode and a first gate wiring are formed in a first front s...

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Bibliographic Details
Main Authors YANAGIGAWA, HIROSHI, MORI, KAZUHISA, HATA, TOSHIYUKI, NAKASHIBA, YASUTAKA
Format Patent
LanguageChinese
English
Published 16.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes: a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode; and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode. A first source electrode and a first gate wiring are formed in a first front surface of the first semiconductor chip, and a first drain electrode is formed in a first back surface of the first semiconductor chip. A second source electrode and a second gate wiring are formed in a second front surface of the second semiconductor chip, and a second drain electrode is formed in a second back surface of the second semiconductor chip. The first front surface and the second front surface face each other such that the first source electrode and the second source electrode are in contact with each other via a conductive paste.
Bibliography:Application Number: TW202312102915