Metal-insulator-metal capacitor with top contact

• Main Authors: NALLAPATI, GIRIDHAR, GE, LIXIN, ZHU, JOHN JIANHONG
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed are examples of a device and method of fabricating a device including a first top contact, a second top contact, adjacent the first top contact, a first mesa disposed below the first top contact and a second mesa disposed below the second top contact. A first plate of a metal-insulator-metal (MIM) capacitor is disposed below the first top contact and electrically coupled to the first top contact. A first insulator of the MIM capacitor is disposed on the first plate. A second plate of the MIM capacitor is disposed on the first insulator and electrically coupled to the second top contact. A second insulator of the MIM capacitor is disposed on the second plate. A third plate of the MIM capacitor is disposed on the second insulator and electrically coupled to the first top contact.