Methods of fabricating a capacitor

A method of fabricating a capacitor includes forming a lower electrode on a semiconductor substrate in a reaction space. A homogeneous oxide layer is formed on the lower electrode. A dielectric layer is formed on the homogeneous oxide layer. An upper electrode is formed on the dielectric layer. The...

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Bibliographic Details
Main Authors SHIN, YU-KYUNG, SEO, JONG-BEOM, CHO, CHEOL-JIN, JUNG, CHANG-HWA, KIM, HYUN-JUN
Format Patent
LanguageChinese
English
Published 16.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a capacitor includes forming a lower electrode on a semiconductor substrate in a reaction space. A homogeneous oxide layer is formed on the lower electrode. A dielectric layer is formed on the homogeneous oxide layer. An upper electrode is formed on the dielectric layer. The forming of the homogeneous oxide layer includes performing a homogeneous oxide layer forming cycle at least one time. The homogeneous oxide layer forming cycle includes supplying an oxidizing agent, purging the oxidizing agent, and pumping-out the reaction space.
Bibliography:Application Number: TW202211136751