Exposure method and exposure system

The present invention addresses the problem of providing an exposure method and an exposure system which make it possible to suppress a decrease in productivity even if the size of an interposer is increased. An exposure method according to an embodiment of the present invention comprises a first ex...

Full description

Saved in:
Bibliographic Details
Main Authors TAKAMATSU, HIROSUKE, TAKAHASHI, RYOTARO, HIKI, TATSUYA, HASHIMOTO, KIYOAKI, NOGITA, KANTA
Format Patent
LanguageChinese
English
Published 16.07.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
Online AccessGet full text

Cover

More Information
Summary:The present invention addresses the problem of providing an exposure method and an exposure system which make it possible to suppress a decrease in productivity even if the size of an interposer is increased. An exposure method according to an embodiment of the present invention comprises a first exposure step and a second exposure step. In the first exposure step, a first pattern (P1) is exposed on a resist on a substrate using a first exposure device having first exposure accuracy. In the second exposure step, a second pattern (P2) different from the first pattern is exposed on the resist on which the first pattern (P1) has been exposed using a second exposure device having second exposure accuracy different from the first exposure accuracy.
Bibliography:Application Number: TW202211139069