Semiconductor substrate production method and composition
The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which incl...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
16.07.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which includes a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the coating step, and a step for etching while using the resist pattern as a mask, wherein: the composition for forming the resist underlayer film contains a compound having a partial structure represented by formula (1), and a solvent; and the compound has at least one monovalent group which includes an aromatic heterocycle having a 5- to 20-membered ring. (In formula (1), Ar1 and Ar2 each independently represent a substituted or unsubstituted aromatic ring which has a 5- to 20-membered ring and forms a conde |
---|---|
Bibliography: | Application Number: TW202211147078 |