Semiconductor substrate production method and composition

• Main Authors: UEDA, KANAKO, MAYUMI, KOSUKE, NAGANAWA, ATSUKO, NAKATSU, HIROKI, TANAKA, RYOTARO
• Format: Patent
• Language: Chinese; English
• Published: 16.07.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

The purpose of the present invention is to provide: a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance and heat resistance can be formed; and a composition. Provided is a method for producing a semiconductor substrate which includes a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the coating step, and a step for etching while using the resist pattern as a mask, wherein: the composition for forming the resist underlayer film contains a compound having a partial structure represented by formula (1), and a solvent; and the compound has at least one monovalent group which includes an aromatic heterocycle having a 5- to 20-membered ring. (In formula (1), Ar1 and Ar2 each independently represent a substituted or unsubstituted aromatic ring which has a 5- to 20-membered ring and forms a conde