Method of manufacturing semiconductor devices and semiconductor devices

A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, a control layer disposed over the first ILD layer and containing silicon and oxygen, and a resistor wire disposed over the control layer. An oxygen concentration of the control layer is greater than...

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Bibliographic Details
Main Authors NIAN, JUN-NAN, WU, JYUN-RU, LU, HSUEH-HAN, CHUNG, MINGING, LIANG, YAO-HSIANG
Format Patent
LanguageChinese
English
Published 01.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, a control layer disposed over the first ILD layer and containing silicon and oxygen, and a resistor wire disposed over the control layer. An oxygen concentration of the control layer is greater than an oxygen concentration of the first ILD layer.
Bibliography:Application Number: TW202211119630