Chambers and coatings for reducing backside damage

Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the s...

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Main Authors TEDESCHI, LEONARD M, WANG, CHANGGONG, KOU, TENG-FANG, SCHWARZ, BENJAMIN CE, BANDA, SUMANTH, FIROUZDOR, VAHID, RAMASWAMY, KARTIK
Format Patent
LanguageChinese
English
Published 01.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.
Bibliography:Application Number: TW20220134238