Diamond coated tool and method for diamond coating tool

• Main Authors: KHAN, ADAM, KOVI, KUMAR KIRAN
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; PERFORMING OPERATIONS; POLISHING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; REFRACTORIES; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING; TREATMENT OF NATURAL STONE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A tool such as a wafer handler or wafer chuck can include a surface having at least one protrusion. A diamond coating is formed from diamond grains sized so that 90% of the grains are between 200 and 300 nanometers, with the diamond coating being deposited on the surface at a temperature below 500 degrees Celsius over the at least one protrusion. Dopants can be used to provide electrical conductivity needed for electrostatic wafer chuck.