A device and method for temperature monitoring of a power transistor formed in a first semiconductor die

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of...

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Main Authors WANG, ZHEN-YU, ANKITITRAKUL, SITTHIPONG, WANG, XIAO-BIN, YIN, JIAN, BARTHOLOMEUSZ, CHRISTOPHER BEN, GUAN, LING-PENG
Format Patent
LanguageChinese
English
Published 16.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
CONTROLLING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
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Summary:A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.
Bibliography:Application Number: TW202211142256