Pedestal-based pocket integration process for embedded memory

A pocket integration for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive s...

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Bibliographic Details
Main Authors MATHURIYA, AMRITA, DOKANIA, RAJEEV KUMAR, MANIPATRUNI, SASIKANTH, SATO, NORIYUKI, MUKHERJEE, NILOY, GOSAVI, TANAY
Format Patent
LanguageChinese
English
Published 01.05.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A pocket integration for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.
Bibliography:Application Number: TW202211132919