Method of manufacturing an integrated circuit

Provided are methods of manufacturing integrated circuit that include a polysilicon etch process in which the wafer having an etch poly pattern is loaded into a reactor chamber and exposed to an activated etchant and, during the etch process, adjusting the temperature conditions within the reactor c...

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Bibliographic Details
Main Authors HE, YUN-JUI, LIAO, CHIH-TENG
Format Patent
LanguageChinese
English
Published 01.02.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are methods of manufacturing integrated circuit that include a polysilicon etch process in which the wafer having an etch poly pattern is loaded into a reactor chamber and exposed to an activated etchant and, during the etch process, adjusting the temperature conditions within the reactor chamber to increase polymeric deposition on an upper surface of the wafer.
Bibliography:Application Number: TW202110136150