Method of fabricating inverted pyramid textured surface of monocrystalline silicon wafer

• Main Author: LAN, CHUNG-WEN
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method, according to the invention, of fabricating an inverted parymid textured surface of a monocrystalline silicon wafter is, firstly, to remove an oxie on the surface of the monocrystalline silicon wafter. Next, the method according to the invention is to immerse the monocrystalline silicon wafer in an etching solution to maintain an etching temperature and an etching time to perform an etching process such that a plurality of inverted pyramid structures and a plurality of copper nano-particles are formed on the surface of the monocrystalline silicon wafer. During the etching process, a plurality of bubbles of an inert gas are conducted into the etching solution. The composition of the etching solution includes 0.02M~0.1M Cu2+, 0.5M~3.5M HF and 0.5M~3M H2O2. Then, the method according to the invention is to remove the copper nano-particles formed on the surface of the monocrystalline silicon wafer. Next, the method according to the invention is to wash the monocrystalline silicon wafer. Finally, the meth