Semiconductor manufacturing facility and method of operating the same

• Main Authors: KIM, MIN-JAE, BAE, JIN-HO, LEE, JONG-TAEK
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to the present invention, there are provided a semiconductor manufacturing facility including: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor, wherein the residual gas is discharged from the process chamber, flows along the chamber exhaust pipe so that an exhaust gas is formed, and the treatment gas is decomposed by plasma in the plasma reaction region so that reactive species are formed, and the reactive species are supplied to the chamber exhaust pipe, and the treatment gas is oxygen (O2) or nit