Semiconductor device and manufacturing method thereof

A semiconductor device includes a substrate. A gate insulating film is formed on the surface of the substrate. A first gate electrode layer is formed on the gate insulating film. A second gate electrode layer is formed on the first gate electrode layer and electrically connected to the first gate el...

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Bibliographic Details
Main Author INDEN, TOMOYA
Format Patent
LanguageChinese
English
Published 01.01.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate. A gate insulating film is formed on the surface of the substrate. A first gate electrode layer is formed on the gate insulating film. A second gate electrode layer is formed on the first gate electrode layer and electrically connected to the first gate electrode layer. A first contact extends through the second gate electrode layer to reach the first gate electrode layer. First and second impurity layers are formed on opposite sides of the first and second gate electrode layers.
Bibliography:Application Number: TW202110146988