Method for producing single crystal diamond and the same

• Main Authors: SHAKHOV, FEDOR, OSHIMA, RYUJI, VUL, ALEXANDER, IIZUKA, KANJI
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; THEIR RELEVANT APPARATUS; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided are: a method for producing single crystal diamond, whereby it becomes possible to synthesize single crystal diamond having excellent durability at low cost within a short time; and single crystal diamond. In the method for producing single crystal diamond, a high-temperature high-pressure method is employed, and the single crystal diamond is synthesized by exposing a starting material comprising amorphous carbon and a carbon compound to a pressure and a temperature each of which falls within a region where diamond is thermally stable in a carbon phase equilibrium diagram.