Semiconductor device including hard mask structure

• Main Authors: PARK, JONG-YOUNG, LEE, YONG-DEOK, COCHE, PHILIPPE, KIM, IL-WOO, BAEK, SONGYI, KYUNG, SE-JIN, PARK, HWAN-YEOL, KONG, DAE-WEE
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.