Semiconductor device
A semiconductor device with reduced contact resistance is provided. The semiconductor device includes a substrate having a channel region and a source/drain region, a source/drain contact structure over the source/drain region, a conductive structure over the source/drain contact structure, an inter...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.11.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device with reduced contact resistance is provided. The semiconductor device includes a substrate having a channel region and a source/drain region, a source/drain contact structure over the source/drain region, a conductive structure over the source/drain contact structure, an interlayer dielectric (ILD) layer surrounding the conductive structure and source/drain contact structure, a dielectric liner between the ILD layer and the conductive structure, and a diffusion barrier between the dielectric liner and the conductive structure. |
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Bibliography: | Application Number: TW202211108992 |