Semiconductor device

A semiconductor device with reduced contact resistance is provided. The semiconductor device includes a substrate having a channel region and a source/drain region, a source/drain contact structure over the source/drain region, a conductive structure over the source/drain contact structure, an inter...

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Bibliographic Details
Main Authors HUANG, LIN-YU, YU, LI-ZHEN, YOU, JIAUAN, CHANG, CHIA-HAO
Format Patent
LanguageChinese
English
Published 16.11.2022
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Summary:A semiconductor device with reduced contact resistance is provided. The semiconductor device includes a substrate having a channel region and a source/drain region, a source/drain contact structure over the source/drain region, a conductive structure over the source/drain contact structure, an interlayer dielectric (ILD) layer surrounding the conductive structure and source/drain contact structure, a dielectric liner between the ILD layer and the conductive structure, and a diffusion barrier between the dielectric liner and the conductive structure.
Bibliography:Application Number: TW202211108992