Etching method and etching apparatus etching a film to be etched in a plasma processing apparatus

This invention provides a technique for improving verticality in etching. An etching method is used to etch a film to be etched in a plasma processing apparatus, and the plasma processing apparatus has a chamber and a substrate supporter disposed within the chamber and configured to support a substr...

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Bibliographic Details
Main Authors KIHARA, YOSHIHIDE, SUDA, RYUTARO, TOMURA, MAJU, KUMAGAI, KAE, ORUI, TAKATOSHI
Format Patent
LanguageChinese
English
Published 16.11.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention provides a technique for improving verticality in etching. An etching method is used to etch a film to be etched in a plasma processing apparatus, and the plasma processing apparatus has a chamber and a substrate supporter disposed within the chamber and configured to support a substrate. The etching method includes the following steps: configuring the substrate with the film to be etched on the substrate supporter; supplying a process gas containing a HF gas to the chamber; generating a plasma of the process gas within the chamber by means of a high frequency having a first frequency; and periodically applying a pulse voltage to the substrate supporter at a second frequency lower than the first frequency.
Bibliography:Application Number: TW202110116654