Optimizing edge radical flux in a downstream plasma chamber

• Main Authors: KOSCHE, SERGE, PARK, PIL-YEON, KAWAGUCHI, MARK, KON, SHIHUNG, BRAVO, ANDREW STRATTON, WHITTEN, STEPHEN, MONBEIG, JULIEN AUGUSTIN
• Format: Patent
• Language: Chinese; English
• Published: 01.10.2022
• Subjects: ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

A showerhead for a processing chamber in a substrate processing system includes an upper portion having a lower surface and an upper surface and a faceplate. A lower surface of the faceplate is below the lower surface of the upper portion such that the showerhead extends into an interior volume of the processing chamber and the faceplate includes a plurality of holes arranged in a pattern to provide fluid communication between a remote plasma source above the showerhead and the interior volume of the processing chamber. A sidewall extends upward from an outer edge of the faceplate between the faceplate and the upper portion and the upper portion extends radially outward from the sidewall of the showerhead and is configured to be mounted on a sidewall of the processing chamber. A heater is embedded in the upper portion of the showerhead.