Method of forming a semiconductor device

A method of forming a semiconductor device includes steps as follows. forming a metal gate structure over a fin that protrudes above a substrate, where the metal gate structure is surrounded by an interlayer dielectric (ILD) layer, where gate spacers extend along opposing sidewalls of the metal gate...

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Bibliographic Details
Main Author TSAI, MING-HUAN
Format Patent
LanguageChinese
English
Published 16.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor device includes steps as follows. forming a metal gate structure over a fin that protrudes above a substrate, where the metal gate structure is surrounded by an interlayer dielectric (ILD) layer, where gate spacers extend along opposing sidewalls of the metal gate structure; recessing the metal gate structure and the gate spacers below an upper surface of the ILD layer distal from the substrate; after the recessing, forming a first material over the metal gate structure and over the gate spacers; forming a second material over the first material, where an upper surface of the second material is level with the upper surface of the ILD layer; and removing a first portion of the ILD layer adjacent to the metal gate structure to form an opening that exposes a source/drain region at a first side of the metal gate structure.
Bibliography:Application Number: TW202110126824