Memory system
A memory system includes a plurality of first memory units, a plurality of read word lines, and a plurality of read bit lines. Each first memory unit includes a second memory unit, a first transistor, and a second transistor. The first transistor is coupled to the second memory unit. The second tran...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
01.09.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A memory system includes a plurality of first memory units, a plurality of read word lines, and a plurality of read bit lines. Each first memory unit includes a second memory unit, a first transistor, and a second transistor. The first transistor is coupled to the second memory unit. The second transistor is coupled to the second memory unit and the first transistor. Each read word line of the plurality of read word lines is coupled to a plurality of first transistors disposed along a corresponding row. Each read bit line of the plurality of read bit lines is coupled to a plurality of second transistors disposed along a corresponding column. |
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Bibliography: | Application Number: TW202110105333 |