Method for filling recessed features in semiconductor devices with a low-resistivity metal

• Main Authors: O'MEARA, DAVID L, HIGUCHI, HISASHI, YU, KAI-HUNG, AIZAWA, HIROKAZU, LEUSINK, GERRIT J, ZANDI, OMID, WAJDA, CORY
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method for filling recessed features with a low-resistivity metal includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, pre-treating the substrate with a surface modifier that increases metal deposition selectivity on the second layer relative to on the first layer, and depositing a metal layer on the substrate by vapor phase deposition, where the metal layer is preferentially deposited on the second layer in the recessed feature. The method further includes removing metal nuclei deposited on the first layer, including on a field area and on sidewalls of the first layer in the recessed feature, to selectively form the metal layer on the second layer in the recessed feature, where the removing includes exposing the patterned substrate to an etching gas containing ozone.