Heterojunction bipolar transistor and method for forming the same
A heterojunction bipolar transistor includes a bottom sub-collector layer formed over a substrate. The heterojunction bipolar transistor also includes an upper sub-collector layer formed over the bottom sub-collector layer. The heterojunction bipolar transistor also includes a collector layer formed...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.07.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A heterojunction bipolar transistor includes a bottom sub-collector layer formed over a substrate. The heterojunction bipolar transistor also includes an upper sub-collector layer formed over the bottom sub-collector layer. The heterojunction bipolar transistor also includes a collector layer formed over the upper sub-collector layer. The heterojunction bipolar transistor also includes a base layer formed over the collector layer. The heterojunction bipolar transistor also includes an emitter layer formed over the base layer. The heterojunction bipolar transistor also includes a passivation layer covering the bottom sub-collector layer, the upper sub-collector layer, the collector layer, the base layer, and the emitter layer. The heterojunction bipolar transistor also includes a collector electrode covering a first portion of the passivation layer over a sidewall of the upper sub-collector layer. |
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Bibliography: | Application Number: TW202110124605 |