Method for removing epitaxial layer

A method for removing an epitaxial layer includes providing a substrate on which a gallium nitride epitaxial layer to be processed is formed. A high-temperature heat treatment is then performed on the substrate to oxidize the gallium nitride epitaxial layer into a gallium oxide layer, and then a cle...

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Bibliographic Details
Main Authors HSU, WENING, YU, WEN-HUAI, HUNG, SHIH
Format Patent
LanguageChinese
English
Published 01.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A method for removing an epitaxial layer includes providing a substrate on which a gallium nitride epitaxial layer to be processed is formed. A high-temperature heat treatment is then performed on the substrate to oxidize the gallium nitride epitaxial layer into a gallium oxide layer, and then a clean with deionized water is performed on the substrate, combined with ultrasonic vibration to remove a portion of the gallium oxide layer. A cleaning agent is then utilized to remove the gallium oxide layer on the substrate.
Bibliography:Application Number: TW20209144456