Anti-fuse memory device, memory array, and programming method of an anti-fuse memory device for preventing leakage current and program disturbance

When a driving circuit of an anti-fuse memory device programs a selected anti-fuse memory cell, voltage differences between unselected bit lines and unselected anti-fuse control lines would be eliminated or decreased to an acceptable value by floating unselected anti-fuse control lines or by applyin...

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Bibliographic Details
Main Authors LEE, CHIEH-TSE, HUANG, CHENG-DA, LIN, CHUN-HUNG, YEN, TING-YANG
Format Patent
LanguageChinese
English
Published 01.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:When a driving circuit of an anti-fuse memory device programs a selected anti-fuse memory cell, voltage differences between unselected bit lines and unselected anti-fuse control lines would be eliminated or decreased to an acceptable value by floating unselected anti-fuse control lines or by applying a second control line voltage to the unselected anti-fuse control lines. Leakage currents flowing from unselected bit lines through ruptured anti-fuse transistors of the anti-fuse memory device to the unselected anti-fuse control lines would be decreased or eliminated, and program disturbance would be avoided.
Bibliography:Application Number: TW202110142385