Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming a metal layer in a substrate and sequentially forming a barrier layer and an insulating layer on the substrate. The method includes performing a first etching step to form an opening in the insulating layer, and the opening does not...

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Bibliographic Details
Main Authors CHEN, YING-HAO, HO, CHANG-JU, TSAI, KAO-TSAIR
Format Patent
LanguageChinese
English
Published 16.06.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device includes forming a metal layer in a substrate and sequentially forming a barrier layer and an insulating layer on the substrate. The method includes performing a first etching step to form an opening in the insulating layer, and the opening does not expose the barrier layer. After the first etching step, a gap-filling layer is formed on the insulating layer and fills the opening. The method includes performing a second etching step to form a first via communicating the opening in the gap-filling layer, and an upper portion of the opening is widened to form a trench. The method includes performing a third etching step to remove the gap-filling layer in a bottom of the opening and to deepen depths of the trench and the opening. The method includes forming a second via communicating the opening to expose the metal layer.
Bibliography:Application Number: TW20209142374