Method of reducing defects in a multi-layer PECVD TEOS oxide film

• Main Authors: HOWLADER, RANA, PADHI, DEENESH, RAJ, DAEMIAN RAJ BENJAMIN, YE, ZHENG JOHN, MUTYALA, MADHU SANTOSH KUMAR, KAMATH, SANJAY, YU, HANG, KESHRI, ABHIGYAN
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLEANING; CLEANING IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PREVENTION OF FOULING IN GENERAL; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.