Exhaust gas treatment equipment for semiconductor manufacturing facilities

• Main Authors: BAE, JIN-HO, YOO, TAE-WOOK, LEE, JONG-TAEK, RA, JEONG-KYUN
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SEPARATION; TRANSPORTING

Provided is exhaust gas treatment equipment for semiconductor manufacturing facilities, the exhaust gas treatment equipment including a reaction chamber configured to treat exhaust gas by using an inductively coupled plasma reaction, and a reactive gas injection unit configured to inject a reactive gas, wherein the reaction chamber includes a chamber body providing a plasma reaction space in which the inductively coupled plasma reaction occurs, therein and the chamber body having a gas inlet and a gas outlet communicating with the plasma reaction space, and the exhaust gas is introduced into the plasma reaction space through the gas inlet, and the exhaust gas is discharged from the plasma reaction space through the gas outlet, and the reactive gas injection unit injects the reactive gas toward the plasma reaction space through the gas inlet outside an upstream side of the plasma reaction space.