Silicon wafer and method for manufacturing a silicon wafer

To provide a silicon wafer suitable for manufacturing of a semiconductor device having a fine three-dimensional structure, and to provide a method of manufacturing the silicon wafer. In a Czochralski wafer 1 made of silicon, the oxygen concentration of a bulk layer 3 is 0.5*1018/cm3 or more and the...

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Main Authors IKEDA, SHOJI, SUDO, HARUO, ISHIKAWA, TAKASHI, FUKUDA, ETSUO, MATSUMURA, HISASHI, IZUNOME, KOJI, AOKI, TATSUHIKO, ENDOH, TETSUO
Format Patent
LanguageChinese
English
Published 01.05.2022
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:To provide a silicon wafer suitable for manufacturing of a semiconductor device having a fine three-dimensional structure, and to provide a method of manufacturing the silicon wafer. In a Czochralski wafer 1 made of silicon, the oxygen concentration of a bulk layer 3 is 0.5*1018/cm3 or more and the oxygen concentration of a surface layer 2 from the surface up to the depth of 300 nm is 2*1018/cm3 or more.
Bibliography:Application Number: TW202110122408