Semiconductor layer manufacturing method and manufacturing system

• Main Authors: YANG, CHENG-XIAN, FANG, JIAN-ZHI, HUANG, CHIH-HSIEN, GONG, BAO-YOU
• Format: Patent
• Language: Chinese; English
• Published: 16.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A semiconductor layer manufacturing method and manufacturing system is provided in the present invention, including: place the first wafer in the cavity to form a metal film on the first wafer, wherein before forming the metal film, the temperature in the cavity is the first temperature; Take out the first wafer with the metal film has been formed from the cavity, wherein the temperature in the cavity is a second temperature, and the second temperature is greater than the first temperature; Aerate the inert gas into the cavity to cool the cavity so that the temperature in the cavity becomes the first temperature; After the cavity temperature is the first temperature, place the second wafer in the cavity to form the metal film on the second wafer. The invention can reduce the defects on the surface of the metal film.